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GaN Systems - GS-065-030-2-L
Enables Designers to Leverage Low-Cost GaN in Applications up to 3kW

New: GaN Systems 650V GS-065-030-2-L

The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers to take the next step in improved performance in efficiency, thermal management, and power density with increased design flexibility and cost effectiveness to meet new demands from consumer, industrial, and data center customers.

  • 650 V enhancement mode power transistor
  • Bottom cooled, small 8 x 8 mm PDFN package
  • RDS(on) = 50 mOhm
  • IDS(max) = 30 A
  • Simple gate drive Requirements (0 V to 6 V)
  • Transient tolerant gate drive ( 20/+10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Source Sense (SS) pin for optimized gate drive
  • Reverse conduction capability
  • Zero reverse recovery loss
  • RoHS 3 (6+4) compliant
  • Bridgeless Totem Pole PFC
  • Consumer, Industrial and Datacenter High Density Power Supply
  • High Power Adapters
  • LED Lighting Drivers
  • Appliance and Industrial Motor Drives
  • Solar Inverter
  • Uninterruptable Power Supplies
  • Laser Drivers
  • Wireless Power Transfer

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.