Compact DC/DC Converter for SiC Drive Applications

Optimal voltage levels for improved system efficiency and safety
R24C2T25 Simplifies SiC Selection & Evaluation

R24C2T25 Simplifies SiC Selection & Evaluation

The R24C2T25 series 2W isolated DC/DC converter is a versatile solution designed for isolated gate bias voltages, particularly for transistors such as IGBTs and Si and SiC MOSFETs. This compact converter features programmable asymmetrical output voltages, ensuring precise control and performance optimization for power electronics applications.

R24C2T25 - Isolated DC/DC Converter

Product
Vin (V)
Nr. of Outputs
Iout 1 (mA)
Iout 2 (mA)
Isolation (kV)
R24C2T25-CT
21.0 – 27.0
Dual
100.0
-12.0
Isolated

With high 3kVAC/1min isolation and remarkable stability even at 125°C (0.5W), it offers superior reliability. The ultra-low isolation capacitance, less than 3.5pF, ensures minimal noise propagation across the isolation barrier. All of these exceptional features are packaged in a compact 7.5 x 12.83mm SMD form factor, making it an ideal choice for all isolated gate bias voltage needs.

R24C2T25 - Benefits & Features

Space Efficiency

SMT DC/DC converters are typically smaller in size, allowing for a more compact design. This is crucial in applications where board space is limited, such as in portable devices or miniaturized electronics.

High-Power Density

Surface mount packages contribute to higher power density on the PCB, enabling the creation of more powerful converters within a given space.

Improved Thermal Performance

Surface mount packages contribute to higher power density on the PCB, enabling the creation of more powerful converters within a given space.

Enhanced high-frequency performance

SMT technology reduces lead lengths and parasitic effects, contributing to improved high-frequency performance of the converter. This is beneficial for applications where fast switching speeds are required.

Automated assembly

Surface mount technology supports automated assembly processes, making the production of DC/DC converters more efficient and cost-effective.

Reduced electromagnetic interference (EMI)

SMT components, with their shorter leads and compact layout, can help minimize electromagnetic interference, improving the overall electromagnetic compatibility (EMC) of the system.

Higher component density

MT packages allow for higher component density on the PCB, enabling the integration of additional features or functions into the same space.

R24C2T25 - Isolated DC/DC Converter

Isolation of the R24C2T25 is 3kVAC/1min with an ultra-low coupling capacitance of 3.5pF and a common mode transient immunity of +/-150kV/µs. This makes the parts ideal for powering high-side gate drives with fast dV/dt and dI/dt power switch edge rates.

The R24C2T25 features soft start, input under-voltage and over-voltage lockout, thermal shutdown, and output over-power protection. Output over-voltage and under-voltage lockout are also provided to ensure power devices cannot be stressed by invalid gate voltages. A power-good signal is provided along with ON/OFF control to put the device into standby mode with less than 700µA current draw.

In addition to programmability, the R24C2T25 features another advance compared to its predecessors: the use of surface mount technology (SMT) in the form of a compact 7.5 x 12.83mm 36-pin SSO-package. A surface mount package is highly desired by designers because it offers numerous advantages versus equivalent through-hole devices:

Additional  Resources

February 2, 2024
The RACM1200-V series is setting a new benchmark for compactness in the class of AC power supplies for reliable fan-less operation supporting long term system availability.
December 11, 2023
DC/DC converters are often required to provide an isolated, asymmetric supply for high-side gate drivers. The simplest (functional) isolation can withstand 1kVDC for one second.

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.