3 Watt SMD Single- and Dual-Output

Meets harsh environmental requirements for renewable energy

RA3 DC/DC Converters

RECOM’s 3W SMD Single- and Dual-Output RA3 series DC/DC Converters for Si, SiC and GaN Power Transistor Gate Drivers

RECOM’s RA3 series features 3-watt DC/DC converters which are especially designed to power transistor gate drivers. The modules are available with input voltages of 5, 12, or 24 VDC with single or dual asymmetric outputs to cover the latest Si, SiC, and GaN transistors on the market today. The compact SMD design ensures that required board space is minimal – especially on multilayer PCBs. The modules offer a robust 5.2kVDC/1min isolation and an isolation capacitance less than 10pF. The operating temperature range of -40C to +85°C at full load meets harsh environmental requirements for renewable energy such as solar inverters, induction heating, telecom, EV battery chargers, and motor drives.

Features

  • 3W isolated DC/DC converter
  • High 5.2kVDC/1min isolation
  • Wide operating temperature range: -40°C to +85°C
  • Ideal for IGBT/Si/SiC/GaN gate drive power
  • IEC/EN/UL CSA 62368-1 certified
  • Less than 10pF isolation capacitance
  • Compact DIP16 SMD package
  • RECOM RA3 DC/DC Converters

    Part Number
    Nominal Input Voltage (VDC)
    Output Voltage 1/2 (VDC)
    Output Current (mA)
    Efficiency typ.(1)
    (%)
    Max. Capacitive Load(2)
    (μF)
    RA3-0508S/SMD
    5
    8
    375
    81
    470
    RA3-050701D/SMD
    5
    +7/-1
    +420/-100
    79
    200/680
    RA3-051503D/SMD
    5
    +15/-3
    +100/-500
    78
    150/680
    RA3-051505D/SMD
    5
    +15/-5
    +100/-300
    81
    47/680
    RA3-052005D/SMD
    5
    +20/-5
    +75/-300
    80
    47/680
    RA3-1208S/SMD
    12
    8
    375
    81
    470
    RA3-1209S/SMD
    12
    9
    334
    80
    470
    RA3-120701D/SMD
    12
    +7/-1
    +420/-100
    82
    200/680
    RA3-121503D/SMD
    12
    +15/-3
    +100/-500
    79
    150/680
    RA3-121505D/SMD
    12
    +15/-5
    +100/-300
    81
    47/680
    RA3-122005D/SMD
    12
    +20/-5
    +75/-300
    80
    47/680
    RA3-2408S/SMD
    24
    8
    375
    82
    470
    RA3-240701D/SMD
    24
    +7/-1
    +420/-100
    80
    200/680
    RA3-241503D/SMD
    24
    +15/-3
    +100/-500
    80
    150/680
    RA3-241505D/SMD
    24
    +15/-5
    +100/-300
    81
    47/680
    RA3-242005D/SMD
    24
    +20/-5
    +75/-300
    81
    47/680

    Note 1: Efficiency is tested at nominal input and full load at +25°C ambient

    Note 2: Max Cap Load is tested at nominal input and constant resistive load – R, tape & reel available, 200-piece MOQ

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    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.