Development Tools to Speed Your Time to Market

Work with Richardson RFPD’s global FAE team to support configuration with SiC modules from many of the industry’s leading names in addition to Microchip.
Silicon Carbide (SiC) Gate Driver Development Kits

Silicon Carbide (SiC) Gate Driver Development Kits

Microchip accelerated Silicon Carbide (SiC) development kits include the hardware and software elements required to optimize the performance of SiC modules and systems. Microchip’s ASDAK development kits give you the freedom to use many compatible SiC modules and family of SP6LI low-inductance SiC modules featured in all the ASDAK+ kits.

Features

  • Compatible with 1200V and 1700V SiC power modules
  • Intelligent Configuration Tool (ICT) included
  • Kits are available both with or without power modules
  • ASDAK-MSCSM & ASDAK-2ASC Kits

    ASDAK-MSCSM Kits Include:

  • One SiC power module
  • One 2ASC series core
  • One SP6CA1 Module Adapter Board (MAB)
  • One Programming Kit (ASBK)
  • ASDAK-2ASC Kits Include:

  • Three 2ASC series cores
  • One Module Adapter Board (MAB)
  • One Programming Kit (ASBK)
  • Development Kit
    Driver Core
    Module Adapter Board
    Core Voltage (V)
    Module Voltage (V)
    SiC Modules
    ASDAK-MSCSM120AM02CT6LIAG-01
    1 × 2ASC-12A1HP
    1 × SP6CA1
    1200
    1200
    MSCSM120AM02CT6LIAG
    ASDAK-MSCSM120AM03CT6LIAG-01
    1 × 2ASC-12A1HP
    1 × SP6CA1
    1200
    1200
    MSCSM120AM03CT6LIAG
    ASDAK-MSCSM120AM042CT6LIAG-01
    1 × 2ASC-12A1HP
    1 × SP6CA1
    1200
    1200
    MSCSM120AM042CT6LIAG
    ASDAK-MSCSM70AM025CT6LIAG-01
    1 × 2ASC-12A1HP
    1 × SP6CA1
    1200
    700
    MSCSM70AM025CT6LIAG
    ASDAK-2ASC-12A1HP-62
    3 × 2ASC-12A1HP
    1 × 62CA1
    1200
    Up to 1200
    ASDAK-2ASC-17A1HP-62
    3 × 2ASC-17A1HP
    1 × 62CA4
    1700
    Up to 1700
    ASDAK-2ASC-12A1HP-SP6LI
    3 × 2ASC-12A1HP
    1 × SP6CA1
    1200
    Up to 1200

    SiC & IGBT Gate Driver Modules 

    SiC Gate Driver Cores and Module Adapter Boards

    • Software configurable ±Vgs gate voltages
    • Patented Augmented Switching technology
    • Robust short circuit protection
    • High immunity to noise

    SiC Plug-and-Play Gate Drivers

    • Compatible with 62 mm SiC MOSFET modules
    • Software configurable to meet the requirements of your application
    • Temperature and isolated high-voltage monitoring
    • Automotive-grade components

    IGBT Gate Drivers

    • Multi-level turn-off time and voltage level
    • Desaturation time and voltage level
    • Gate drive voltage +15V/−10V
    • Peak gate current ±30A
    • IGBTs up to 3.3 kV
    • Single-channel, 7W output power

    Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.