Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry-standard footprint.
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New! 2300 V WolfPACK™ Power Modules
Designed specifically for 1500 V bus applications and enable the shift from a IGBT-based three-level architecture to a simplified 2-level power conversion system.
Wolfspeed
1200 V WolfPACK™ Power Modules
Designed to provide an excellent solution for fast design implementation, scalability, long term design support, and lower assembly overhead.
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Evaluation Tools
Wolfspeed offers a wide array of Evaluation Kits to help you better understand the capability of our silicon carbide discrete and module packages.
WolfPACK™ Modules from Wolfspeed
Key Benefits
Key Features
New! 2300 V WolfPACK™ Modules from Wolfspeed
Wolfspeed’s 2300 V WolfPACK™ Silicon Carbide power modules were designed specifically for 1500 V bus applications and enable the shift from a IGBT-based three-level architecture to a simplified 2-level power conversion system. This solution significantly cuts development time and cost by moving the system design from a legacy bus bar to lower cost PCBs.
Part Number | Package (V) | Configuration | Blocking Voltage | Current Rating | RDS(on) @ 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended for New Design? | ||
|---|---|---|---|---|---|---|---|---|---|---|---|
| CAB5R0A23GM4T |  | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
| CAB5R0A23GM4 | | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
| CAB6R0A23GM4
| | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
| CAB6R0A23GM4T | | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
| CAB7R5A23GM4T | | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
| CAB7R5A23GM4 | | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
1200 V WolfPACK™ Modules from Wolfspeed
Part Number | Package (V) | Configuration | Blocking Voltage | Current Rating | RDS(on) @ 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended for New Design? |  | CAB011A12GM3T | GM | Half-Bridge | 1200V | 141A | 11mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes |
|---|---|---|---|---|---|---|---|---|---|---|
| CAB006M12GM3 | GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB006A12GM3 | GM3 | Half-Bridge (AIN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB006M12GM3T | GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB006A12GM3T | GM3 | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB008A12GM3 | GM3 | Half-Bridge (AIN substrate) | 1200 V | 194 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB008M12GM3 | GM3 | Half-Bridge | 1200 V | 146 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB008M12GM3T
| GM3 | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB008A12GM3T | GM3 | Half-Bridge | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 x 56.7 mm | Yes |
| CAB011M12FM3 | FM3 | Half-Bridge | 1200 V | 105 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 x 33.8 mm | Yes |
| CAB011M12FM3T
| FM3 |
Half-Bridge | 1200 V
|
117 A |
11 mΩ |
Gen 3 MOS |
150 °C |
62.8 mm x 33.8 mm | Yes |
| CAB016M12FM3
| FM3 | Half-Bridge | 1200 V | 78 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 x 33.8 mm | Yes |
| CAB016M12FM3T |
FM3 | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes |
| CCB021M12FM3 | FM3 | Six-pack (three-phase) | 1200 V | 51 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 x 33.8 mm | Yes |
| CBB021M12FM3 | FM3 | Full-Bridge |
1200 V | 50 A | 21 mΩ |
Gen 3 MOS |
150 °C | 62.8 mm x 33.8 mm | Yes |
| CCB021M12FM3T |
FM3 | Six-pack (three-phase) | 1200 V |
30 A | 21 mΩ | Gen 3 |
150 °C | 62.8 mm x 33.8 mm | Yes |
| CBB021M12FM3T | FM3 | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes |
| CCB032M12FM3 | FM3 | Six-pack (three-phase) | 1200 V | 40 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 x 33.8 mm | Yes |
| CBB032M12FM3 |
FM3 | Full-Bridge |
1200 V |
39 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes |
| CCB032M12FM3T
| FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes |
| CBB032M12FM3T | FM3 | Full-Bridge | 1200 V | 37 A |
32 mΩ | Gen 3 MOS |
150 °C | 62.8 mm x 33.8 mm | Yes |
Evaluation Tools from Wolfspeed
The EVAL-ADuM4146WHB1Z is a half-bridge gate driver board that allows simple evaluation of the performance of the ADuM4146 when driving advanced Wolfspeed third generation C3M™ SiC MOSFETs and power modules. Use it in conjunction with Wolfspeed’s clamped inductive load test boards or half-bridge evaluation boards and differential transceiver boards.
Dynamic characterization tool that can be used to evaluate and optimize switching performance of Wolfspeed’s WolfPACK SiC half-bridge power modules – CAB011M12FM3 and CAB016M12FM3.
Additional Resources
