Wolfspeed WolfPACK™ Silicon Carbide Power Modules

Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry-standard footprint.
Wolfspeed WolfPACK™ Silicon Carbide Power Modules

Wolfspeed WolfPACK™ Silicon Carbide Power Modules

Wolfspeed has launched a baseplate-less module family to meet the requirements of medium power applications, providing solutions across the power electronics continuum. Wolfspeed WolfPACK™ modules are a great choice for designers who want to increase efficiency and power density in a compact, industry-standard footprint. The family of modules provide an excellent solution for fast design implementation, scalability and lower assembly overhead.

WolfPACK™ Modules from Wolfspeed

Key Benefits

  • Maximum power density
  • Ease of layout and assembly
  • System scalability and reliability
  • Simpler cooling systems and smaller systems
  • Key Features

  • Leading silicon carbide MOSFET technology in an industry standard form factor
  • Highest current rated topologies commercially available
  • Built in NTC
  • Press fit connections
  • Wolfspeed WolfPACK™ modules are currently available in half-bridge and six-pack configurations.
    Part Number
    Package (V)
    Configuration
    Blocking Voltage
    Current Rating
    RDS(on) @ 25°C
    Generation
    Maximum Junction Temperature
    Module Size
    Recommended for New Design?
    CAB011A12GM3
    GM
    Half-Bridge
    1200V
    141A
    11mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 56.7 mm
    Yes
    CAB011A12GM3T
    GM
    Half-Bridge
    1200V
    141A
    11mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 56.7 mm
    Yes
    CAB006M12GM3
    GM3
    Half-Bridge
    1200 V
    200 A
    6 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB006A12GM3
    GM3
    Half-Bridge (AIN substrate)
    1200 V
    200 A
    6 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB006M12GM3T
    GM3
    Half-Bridge
    1200 V
    200 A
    6 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB006A12GM3T
    GM3
    Half Bridge (AlN substrate)
    1200 V
    200 A
    6 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB008A12GM3
    GM3
    Half-Bridge (AIN substrate)
    1200 V
    194 A
    8 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB008M12GM3
    GM3
    Half-Bridge
    1200 V
    146 A
    8 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB008M12GM3T
    GM3
    Half-Bridge
    1200 V
    160 A
    8 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB008A12GM3T
    GM3
    Half-Bridge
    1200 V
    181 A
    8 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 56.7 mm
    Yes
    CAB011M12FM3
    FM3
    Half-Bridge
    1200 V
    105 A
    11 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 33.8 mm
    Yes
    CAB011M12FM3T
    FM3
    Half-Bridge
    1200 V
    117 A
    11 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CAB016M12FM3
    FM3
    Half-Bridge
    1200 V
    78 A
    16 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 33.8 mm
    Yes
    CAB016M12FM3T
    FM3
    Half-Bridge
    1200 V
    84 A
    16 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CCB021M12FM3
    FM3
    Six-pack (three-phase)
    1200 V
    51 A
    21 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 33.8 mm
    Yes
    CBB021M12FM3
    FM3
    Full-Bridge
    1200 V
    50 A
    21 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CCB021M12FM3T
    FM3
    Six-pack (three-phase)
    1200 V
    30 A
    21 mΩ
    Gen 3
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CBB021M12FM3T
    FM3
    Full-Bridge
    1200 V
    48 A
    21 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CCB032M12FM3
    FM3
    Six-pack (three-phase)
    1200 V
    40 A
    32 mΩ
    Gen 3 MOS
    150 °C
    62.8 x 33.8 mm
    Yes
    CBB032M12FM3
    FM3
    Full-Bridge
    1200 V
    39 A
    32 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CCB032M12FM3T
    FM3
    Six-pack (three-phase)
    1200 V
    30 A
    32 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes
    CBB032M12FM3T
    FM3
    Full-Bridge
    1200 V
    37 A
    32 mΩ
    Gen 3 MOS
    150 °C
    62.8 mm x 33.8 mm
    Yes

    Wolfspeed Evaluation Tools

    Dynamic characterization tool that can be used to evaluate and optimize switching performance of Wolfspeed’s WolfPACK SiC half-bridge power modules – CAB011M12FM3 and CAB016M12FM3.

    The EVAL-ADuM4146WHB1Z is a half-bridge gate driver board that allows simple evaluation of the performance of the ADuM4146 when driving advanced Wolfspeed third generation C3M™ SiC MOSFETs and power modules. Use it in conjunction with Wolfspeed’s clamped inductive load test boards or half-bridge evaluation boards and differential transceiver boards.​

    Dynamic characterization tool that can be used to evaluate and optimize switching performance of Wolfspeed’s WolfPACK SiC half-bridge power modules – CAB011M12FM3 and CAB016M12FM3.

    Dynamic characterization tool that can be used to evaluate and optimize switching performance of Wolfspeed’s WolfPACK SiC six-pack (three phase) power modules – CCB021M12FM3 and CCB032M12FM3.
    Dynamic characterization tool that can be used to evaluate and optimize switching performance of Wolfspeed’s WolfPACK™ SiC half-bridge power modules in the GM3 module footprint, including all part numbers with a ‘GM’ in the last three digits of the part number and an ‘A’ in the second digit (example: CAB006M12GM3)

    Additional Resources

    April 17, 2022
    Wolfspeed’s family of WolfPACK™ modules from Richardson RFPD deliver a power portfolio that encompasses a wide spectrum of applications for today’s designers.

    Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.