Electronic devices that are in proximity or share common conductors are susceptible to electromagnetic interference (EMI) that can disrupt their operation. Minimizing emissions is necessary to ensure that electrical systems do not interfere with each other’s normal operation when placed in the same environment. Power semiconductor devices, such as silicon (Si) IGBTs and silicon carbide (SiC) MOSFETs, are a common contributor of conducted EMI due to the fast switching required for their operation. During the switching transitions, the voltage across and current through the device rapidly changes states. The change between off and on states produces a dv/dt and di/dt that generates EMI at harmonic frequencies of the switching frequency.
Related Content

Wolfspeed Gen 4 MOSFETs: Powering Real-World Performance with Next-Gen Efficiency
Wolfspeed has unveiled its Gen 4 technology platform—engineered to deliver breakthrough performance, durability, and efficiency for high-power applications.
Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices
Wolfspeed is now expanding system design options by commercially releasing a well-
known top-side cooled package to both automotive and industrial markets.

Discover Innovative Products & Solutions Showcased At Our IMS2025 Booth
Couldn’t attend in person? You can still explore products and solutions presented at our booth.