Gallium Nitride (GaN)
Gallium Nitride, a wide band gap semiconductor, is rapidly displacing Silicon as the material of choice for power transistors. With their superior material properties and simplicity of use, Gan Systems’ GaN E-HEMTs allow designers to set new standards for efficiency, power density, size and weight.
We stock and support the following Gallium Nitride (GaN)
Innoscience
The INN100W14 has been manufactured using the highest quality materials and the latest manufacturing processes, resulting in a device that is both highly efficient and highly reliable.
- GaN-on-Silicon E-mode HEMT technology
- Dual Channels, Common Source
- Ultra High Switching Frequency
- Fast and Controllable Fall and Rise Time
- Ultra-low on Resistance
Innoscience
650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8 mm size.
- Enhancement mode transistor-Normally off power switch
- Ultra high switching frequency
- No reverse-recovery charge
- Low gate charge, low output charge
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