Electronic devices that are in proximity or share common conductors are susceptible to electromagnetic interference (EMI) that can disrupt their operation. Minimizing emissions is necessary to ensure that electrical systems do not interfere with each other’s normal operation when placed in the same environment. Power semiconductor devices, such as silicon (Si) IGBTs and silicon carbide (SiC) MOSFETs, are a common contributor of conducted EMI due to the fast switching required for their operation. During the switching transitions, the voltage across and current through the device rapidly changes states. The change between off and on states produces a dv/dt and di/dt that generates EMI at harmonic frequencies of the switching frequency.
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