DOWNERS GROVE, Ill. (December 8, 2025) – Richardson RFPD, Inc., an Arrow Electronics company, now offers full design support and availability for two new high-performance GaN RF power transistors from Guerrilla RF: the GRF0020 and GRF0030. These GaN-on-SiC HEMTs deliver exceptional efficiency and bandwidth for demanding RF applications.

Unmatched Performance for RF Systems

• GRF0020
  • Frequency Range: DC to 7.0 GHz
  • Output Power (P3dB): 30 W @ 50 V; 19 W @ 28 V
  • Saturated Gain: 13.5 dB
  • Drain Efficiency: 51%
  • Saturated Output Power: 45.1 dBm
• GRF0030
  • Frequency Range: DC to 6.0 GHz
  • Output Power (P3dB): 50 W @ 50 V; 25 W @ 28 V
  • Saturated Gain: 12.7 dB
  • Drain Efficiency: 60%
  • Saturated Output Power: 46.6 dBm

Both devices operate on 50 V supply rails and support 28 V operation for flexibility. They are housed in industry-standard 3 mm x 3 mm QFN-16 surface-mount packages and are also available as bare die: GRF0020D and GRF0030D.

Applications

• Cellular Infrastructure
• Radar Systems
• Wireless Communications
• Test & Measurement Equipment

Why GaN-on-SiC?

GaN-on-SiC technology offers superior power density, thermal performance, and efficiency compared to traditional LDMOS or GaAs solutions, making these devices ideal for next-generation RF designs.

Learn More

For datasheets, pricing, and online purchasing, visit Richardson RFPD: GRF0020 & GRF0030. To learn about additional products from Guerrilla RF, visit the Guerrilla RF storefront webpage.

Worldwide customers can find local sales support here.