July 10, 2023 – GENEVA, Ill.: Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for a new reference design from NXP Semiconductors.
The A3G26D055N-100 is an orderable reference design for NXP’s A3G26D055NT4, a 100–2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 mm x 6.5 mm over-molded plastic package. It has an unmatched output allowing for wide frequency range utilization. The transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability.
The A3G26D055N-100 circuit optimizes the device from 100–2500 MHz, with 12 W CW and 11 dB gain by utilizing half of the device. The compact circuit (7 cm x 5 cm) is available for order from Richardson RFPD, and the circuit information is licensable from NXP.
Typical performance:
Frequency (MHz) | Pout | Gain | IRL | Drain Efficiency | ID |
100 | 14.8 | 11.7 | -2.5 | 85.7 | 0.540 |
1000 | 11.9 | 10.7 | -7.9 | 64.4 | 0.580 |
2000 | 11.7 | 10.7 | -5.2 | 54.8 | 0.670 |
2500 | 10.9 | 10.3 | -4.9 | 52.9 | 0.640 |
VDD = 48 Vdc, IDQ = 45 mA (VGG = ~ -2.7 Vdc), Pin = 1 W, CW
To find more information or to purchase this product today online, visit the NXP A3G26D055N-100 webpage. The product is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from NXP, visit the NXP storefront webpage.
FOR DETAILS CONTACT
MARK VITELLARO
Director of Strategic Marketing
P: 630 262 6800
mvitellaro@richardsonrfpd.com
