October 9, 2019 – Geneva, III.:
Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new family of 1200V SiC power MOSFETs from Wolfspeed, a Cree Company.
Based on third-generation planar MOSFET technology, the new devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode. According to Wolfspeed, the new product family includes the lowest Rds(on) at 1200V in a discrete package with a flat Rds(on) over temperature.
Wolfspeed designed these third-generation MOSFETs with an increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behavior. Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance
The new devices are suitable for a range of applications, including solar energy systems, EV charging, uninterruptible power supply (UPS), SMPS, motor control and drives, and energy storage.
Additional key features of the 1200V SiC power MOSFETs include:
Current Rating at 25°C
Rds(on) at 25°C
Gate Charge Total
Maximum Junction Temperature
Reverse-Recovery Charge (Qrr)
Reverse-Recover Time (Trr)
To find more information or to purchase these products today online, please visit the C3M0016120D, C3M0021120D, and C3M0032120D webpages. The devices are also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Wolfspeed, please visit the Wolfspeed storefront webpage.