March 10, 2021 – Geneva, III.:
Richardson RFPD, Inc.announced today the availability and full design support capabilities for three new 120 mΩ, 650 V SiC MOSFETs from Wolfspeed, a Cree Company.
Wolfspeed’s 650 V SiC MOSFET portfolio is based on the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package, as well as low switching losses—enabling high efficiency and power density.
The new 120 mΩ, 650 V SiC MOSFETs are available in both through-hole (TO-247-3, TO-247-4) and surface mount (TO-263-7) packages:
FOR DETAILS CONTACT
Global Product Management Director – Energy & Power
P: 630 262 6800
Blocking Voltage (V)
(ID) @ 25° C (A)
Additional key features of Wolfspeed’s 650 V SiC MOSFETs include:
- Superior overall system level efficiency
- High frequency operation
- Robust body diode with low reverse recovery charge
- Kelvin Source connection to reduce parasitic inductance and switching losses
- Industry-standard packages that meet creepage and clearance requirements
Target applications include:
- Server power supplies
- EV charging systems
- Energy storage systems (UPS)
- Solar (PV) inverters
To find more information, to request samples, or to purchase these products today online, visit the Wolfspeed 650 V SiC MOSFETs webpage. The devices are also available by calling 1-800-737-6937 (within North America); or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Wolfspeed, visit the Wolfspeed storefront webpage.