January 18, 2024 – GENEVA, Ill.: Richardson RFPD, Inc., an Arrow Electronics company, announced today the in-stock availability and full design support capabilities for a new gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors.

The CHA8612-QDB is a two-stage high power amplifier operating between 7.9 and 11 GHz. It provides 18 W (typical) of saturated output power and 40% power added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is versatile for a wide range of applications, from military to commercial radar and communication systems.

Additional key features of the CHA8612-QDB include:

• Linear gain: 26 dB
• DC bias: Vd=30 V @ IDQ=680 mA
• MSL 3
• 46-lead, 7×7 mm QFN package

To find more information, or to purchase this product today online, visit the CHA8612-QDB webpage. The device is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from United Monolithic Semiconductors, visit the UMS storefront webpage.