Richardson RFPD Announces In-Stock Availability of New 18 W, X-Band High Power Amplifier from UMS

Richardson RFPD Announces In-Stock Availability of New 18 W, X-Band High Power Amplifier from UMS

Versatile CHA8612-QDB GaN on SiC MMIC in QFN package

NEWS RELEASE

9151 E. Panorama Circle
Centennial, CO 80112

P: 630 262 6800

F: 630 262 6850

January 18, 2024 – GENEVA, Ill.: Richardson RFPD, Inc., an Arrow Electronics company, announced today the in-stock availability and full design support capabilities for a new gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors.

The CHA8612-QDB is a two-stage high power amplifier operating between 7.9 and 11 GHz. It provides 18 W (typical) of saturated output power and 40% power added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is versatile for a wide range of applications, from military to commercial radar and communication systems.

Additional key features of the CHA8612-QDB include:

  • Linear gain: 26 dB
  • DC bias: Vd=30 V @ IDQ=680 mA
  • MSL 3
  • 46-lead, 7×7 mm QFN package

 

To find more information, or to purchase this product today online, visit the CHA8612-QDB webpage. The device is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from United Monolithic Semiconductors, visit the UMS storefront webpage.

FOR DETAILS CONTACT

MARK VITELLARO
Director of Strategic Marketing
P: 630 262 6800
mvitellaro@richardsonrfpd.com

UMS CHA8612-QDB