- Mfg Part Number: ICP2840-1-110I
The ICP2840-1-110I is a Ka Band MMIC power amplifier fabricated using 0.15µm GaN SiC technology. It achieves 39 dBm saturated output power from 27.5-31GHz, with 22% PAE and 22dB small signal gain. The balanced topology provides excellent broadband input and output match to 50O and DC blocking capacitors ensure simple integration. Excellent linearity characteristics make the ICP2840 well suited to applications in Satellite Communications. The die are 100% DC and RF tested on wafer ensuring compliance to the electrical specifications.
- Features & Benefits
- Frequency range: 27.5-31 GHz
- Pout: 39.5 dBm (PIN = 24 dBm)
- PAE: 22% (PIN = 24 dBm)
- Small Signal Gain: 22dB (28 GHz)
- Drain Bias 24 V, IDQ=112-224 mA
Related Content
RF & Microwave
Microchip’s RF MMIC Amplifiers, Prescalers & Control Products
Meet your application’s needs and integrate high-linearity, low-noise Monolithic Microwave Integrated Circuits (MMICs) with Microchip’s low-noise RF amplifiers, prescalers and control products.
September 18, 2023
RF & Microwave
RF Amplifiers from Leading Manufacturers
Richardson RFPD inventories and supports a broad portfolio of RF transmit devices from the leading manufacturers.
January 30, 2023
RF & Microwave
Featured GaN for Avionics & Radar
Microchip offers high-performance, GaN on SiC, High Electron Mobility Transistor (HEMT)-based discrete CW and pulsed RF and microwave transistor products.
May 30, 2022
