In the defense industry, communication is not just necessary it’s a lifeline. NXP’s RF transistors are proven rugged and reliable in the harshest of environments.
The MMRF5018HSR5 is now in production and available for orders. The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

MMRF5018HSR5
1–2700 MHz, 125 W CW, 50 V Widebnd RF Power GaN Transistor


Features
Applications
Ideal for military end−use applications, including the following:
Narrowband and multi−octave wideband amplifiers
- Radar
- Jammers
- EMC testing
Also suitable for commercial applications:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure
Typical 450–2700 MHz Performance
VDD = 50 Vdc, TA = 25°C, IDQ = 200 mA
Frequency (MHz) | Signal Type | Pout(W) | Gps (dB) | ηD (%) | 450–2700(1) | CW | 100 CW | 12.0 | 40.0 |
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MMRF5018HS-450 (EVB) Evaluation Board

Part Number | Frequency Band / Power | Board Description | MMRF5018HS-450 (EVB) | 450-2700 MHz, 125 W | Widest bandwidth compact demo using microstrip architecture |
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Additional Resources
