These scalable designs offer NXP’s latest series of pre driver, 50 ohm Multi Chip PA Module and Rx solutions in a small form factor.
NXP Semiconductors RapidRF front-end designs integrate an RF power amplifier, Rx LNAs, a T/R switch, a circulator and a bias controller in a compact footprint. They incorporate a coupler for DPD feedback and are to be used with digital pre-distortion.
The RapidRF reference boards are ideal for 5G radio units requiring 2.5W to 5.0W (34dBm to 37dBm) average transmit power at the antenna. Versions for different bands use a common PCB layout, simplifying both design and manufacturing for faster time-to-market.
NXP 28 V LDMOS RF Front-End Designs
Part Number | Frequency Range | Average Output Power | Availability | RAPIDRF-36SL039 | 3400-3600 MHz | 39 dBm (8 W) at 8.5 dB OBO, at 29 V | Order / Learn More |
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RAPIDRF-35TL039 | 3400-3600 MHz | 38.5 dBm (7 W) at 9.0 dB OBO, at 26 V | Order / Learn More |
RAPIDRF-26E39 | 2496-2690 MHz | 39 dBm (8 W) at 8 dB OBO, at 27 V | Order / Learn More |
RAPIDRF-35D35 | 3400-3600 MHz | 34.8 dBm (3 W) at 8.4 dB OBO, at 24 V | Order / Learn More |
NXP RapidRF 5G Resources

RapidRF Fact Sheet
RapidRF Fact Sheet

Rapid RF Smart LDMOS User Guide
Rapid RF Smart LDMOS User Guide

NXP 5G Resources
NXP
NXP offers the widest available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration.
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NXP
NXP has introduced a family of 5G massive MIMO modules utilizing its innovative new top-side cooling package technology.