These scalable designs offer NXP’s latest series of pre driver, 50 ohm Multi Chip PA Module and Rx solutions in a small form factor.
NXP Semiconductors RapidRF front-end designs integrate an RF power amplifier, Rx LNAs, a T/R switch, a circulator and a bias controller in a compact footprint. They incorporate a coupler for DPD feedback and are to be used with digital pre-distortion.
The RapidRF reference boards are ideal for 5G radio units requiring 2.5W to 5.0W (34dBm to 37dBm) average transmit power at the antenna. Versions for different bands use a common PCB layout, simplifying both design and manufacturing for faster time-to-market.
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NXP 28 V LDMOS RF Front-End Designs
Part Number | Frequency Range | Average Output Power | Availability | RAPIDRF-36SL039 | 3400-3600 MHz | 39 dBm (8 W) at 8.5 dB OBO, at 29 V | Order / Learn More |
|---|---|---|---|
RAPIDRF-35TL039 | 3400-3600 MHz | 38.5 dBm (7 W) at 9.0 dB OBO, at 26 V | Order / Learn More |
RAPIDRF-26E39 | 2496-2690 MHz | 39 dBm (8 W) at 8 dB OBO, at 27 V | Order / Learn More |
RAPIDRF-35D35 | 3400-3600 MHz | 34.8 dBm (3 W) at 8.4 dB OBO, at 24 V | Order / Learn More |
NXP RapidRF 5G Resources
RapidRF Fact Sheet
RapidRF Fact Sheet
Rapid RF Smart LDMOS User Guide
Rapid RF Smart LDMOS User Guide
NXP 5G Resources
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NXP offers the widest available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration.
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NXP
NXP has introduced a family of 5G massive MIMO modules utilizing its innovative new top-side cooling package technology.