The direct impact of new efficiency standards is the undisputed need for Silicon Carbide (SiC).

Wolfspeed’s new automotive qualified E-Series (E3M) 650 V, 60 mΩ MOSFET family helps designers meet the demands of the EV OBC application space.

This paper will focus on bidirectional OBCs and discuss the advantages of Silicon Carbide (SiC) in both medium-power (6.6 kW) and high-power (11-22 kW) OBCs.

SiC in Stock: 1200V, 400A Module in Robust 62mm Package for Industrial Test Equipment, Rail/Traction and EV Charging Infrastructure

This article will demonstrate how designers can increase system efficiency while lowering cost but most importantly, greatly increase the overall reliability system-wide.

TOLL MOSFETs with a compact footprint: enabling high efficiency and high power density in the most demanding server and data center applications.

SiC in Stock: 1200V, 450A SiC Half-Bridge Module, Conduction Optimized

1200 V & 1700 V Half-Bridge Power Module Footprint Designed for Ultra-High Power Density

SiC in Stock: 1200V, 120A Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module

SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint