MACOM offers an extensive portfolio of GaN on SiC power transistors for use in the design of cellular transmitters supporting all global standards and frequency bands. The lineup includes the WS1A3940-V1 (3700-3980 MHz, 39.5 dBm GaN on SiC Power Amplifier Module) and the WSGPA01-V1 (10 W, 5 GHz GaN on SiC General Purpose Power Amplifier).
WS1A3940-V1
3700-3980 MHz, 39.5 dBm GaN on SiC Power Amplifier Module
The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating MACOM GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. It is housed in a 6 mm X 6 mm land grid array (LGA) package.
- Features & Benefits
- Gain: 18 dB
- Efficiency: 19%
- Operating Voltage: 48 V
- Package Type: Plastic
WSGPA01-V1
10 W, 5 GHz GaN on SiC General Purpose Power Amplifier
- Features & Benefits
- Gain: 18 dB
- Efficiency: 19%
- Operating Voltage: 48 V
- Package Type: Plastic
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