MACOM offers an extensive portfolio of GaN on SiC power transistors for use in the design of cellular transmitters supporting all global standards and frequency bands.

5G represents the next evolutionary step in wireless telecommunications infrastructure and is poised to deliver dramatic improvements in capacity, bandwidth, and latency.

MACOM General Purpose 28 V RF GaN HEMTs.

MACOM’s MAAP-011233 is a 4-stage, 4 W power amplifier assembled in a lead-free, 5-mm 32-lead AQFN plastic package.

MACOM’s MASW-011102 provides 40 dB isolation and is offered in a lead-free 3 mm 14-lead PQFN surface mount plastic package.

The MAAL-011151 delivers wideband performance versatility from 2 to 18 GHz for test and measurement, EW, ECM, and radar applications.

The MAAP-011298 is a 2.3 Watt, 4-stage power amplifier assembled in a lead-free 5 mm 32-lead AQFN plastic package.

The design goal of CGHV1F025S-AMP4 was to create an application circuit for tactical radio capable of operating under a constant amplitude signal such as OQPSK.

The MAAM-011238 is an easy-to-use, wideband amplifier that operates from 100 kHz to 50 GHz.

MAMX-011035 is a GaAs double-balanced passive diode mixer housed in a lead-free 3 mm, 12-lead QFN package.