Featured 650 V GaN E-Mode Power Transistors in 8 x 8 DFN Package

The 8 x 8 dual flat no-lead (DFN) package in the devices featured below ensure efficient (continue with balance of existing sentence)
650 V GaN Enhancement-Mode Power Transistors from Innoscience

650 V GaN Enhancement-Mode Power Transistors from Innoscience

Innoscience’s 650 V GaN-on-silicon enhancement-mode power transistors are designed for high-voltage power applications. The 8×8 mm dual flat no-lead (DFN) package ensures efficient heat dissipation and compact design, making them ideal for a wide range of applications.

Innoscience designs, develops, and manufactures highly performing and reliable GaN devices for a wide range of applications and voltages (LV:30V-150V and HV: 650V), ensuring excellent performance, reliability, support, security of supply, large capacity, and competitive prices thanks to its large volume capabilities, 8-inch wafer size and advanced high-throughput manufacturing tools.

Key Features - 650 V GaN Enhancement-Mode Power Transistors

Benefits

  • Mass manufactured and price-competitive
  • High switching frequencies
  • Zero reverse recovery current
  • Ron x Qg 1/10 of Si MOSFETs
  • Embedded ESD protection
  • Sustain voltage spikes up to 750 V at RT and HT
  • Reliable
  • Pin-to-pin compatible with others

Applications

  • AC-DC converters
  • DC-DC converters
  • Totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion

650 V GaN Enhancement-Mode Power Transistors  in 8 X 8 DFN Package

Part Number
VDS,max
RDS(on),max
RDS(on),typ
Current
INN650D140A
650 V
140 mΩ
106 mΩ
17 A
INN650D190A
650 V
190 mΩ
138 mΩ
11.5 A
INN650D240A
650 V
240 mΩ
165 mΩ
10 A
INN650D350A
650 V
350 mΩ
270 mΩ
6 A

Additional Innoscience Resources

January 2, 2024
The ISG3201  has a 34 A continuous current capability, zero reverse recovery charge, and ultra-low on resistance.
September 18, 2023
The INN100W032A is a 100 V enhancement-mode GaN power transistor for Class D audio, high-frequency DC-DC converters, motor drives and more.

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.