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Next Generation 700V SiC MOSFETs
From Microchip

Microchip Next Generation 700V SiC MOSFETs

Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.

  • High efficiency with lower switching losses
  • Simple to drive and easy to parallel
  • Improved thermal capabilities to 175 degrees Celsius junction temperature
  • Eliminates need for external freewheeling diode
  • Lower system cost (smaller magnetics/heat sinks, fewer components, reduced system size)
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid electric vehicle (HEV)/electric vehicle (EV) powertrain and charging
  • Power supply and distribution

Microsemi Featured Products

Part Number
Voltage
Current
Rds(on)
Package Type
Samples
MSC015SMA070B4
700
140
15
TO-247-4
Request Sample
MSC015SMA070B
700
93
15
TO-247
Request Sample
MSC015SMA070S
700
89
15
D3PAK
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MSC035SMA070B
700
52
35
TO-247
Request Sample
MSC035SMA070S
700
46
35
D3PAK
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MSC060SMA070B4
700
39
60
TO-247-4
Request Sample
MSC060SMA070B
700
28
60
TO-247
Request Sample
MSC060SMA070S
700
26
60
D3PAK
Request Sample
MSC090SMA070B
700
19
90
TO-247
Request Sample
MSC090SMA070S
700
18
90
D3PAK
Request Sample

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.