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Microchip SiC Power Modules
For Aircraft Electrical Systems

Microchip SiC Power Modules

In the race to reduce emissions in aerospace systems, designers are increasingly moving towards more efficient electronics in control systems, including those that replace pneumatics and hydraulics–everything from onboard alternators to actuators and auxiliary power units.

Microchip Technology, working with European Commission consortium member Clean Sky, has developed a family of SiC-based power modules for aerospace applications intended to enable more efficient and compact power conversion and engine drive systems. The modules–designated BL1, BL2, and BL3–use a mix of 1200V silicon carbide (SiC) MOSFETs and 1600V diodes on a modified substrate designed for harsh aviation applications.

Microchip Featured Products

Part Number
Configuration
Voltage (V)
Rds(on) (mΩ)
Current (A)
Silicon Type
Package
MSCSM120AM31CTBL1NG
Phase leg
1200
25
79
SiC MOSFET
BL1
MSCSM120DAM31CTBL1NG
Boost chopper
1200
25
79
SiC MOSFET
BL1
MSCSM120SKM31CTBL1NG
Buck chopper
1200
25
79
SiC MOSFET
BL1
MSCSM120DUM31CTBL1NG
Dual common source
1200
25
79
SiC MOSFET
BL1
MSCSM120HM31CTBL2NG
Full bridge
1200
25
79
SiC MOSFET
BL2
MSCSM120DHM31CTBL2NG
Asymmetrical bridge
1200
25
79
SiC MOSFET
BL2
MSCSM120DDUM31CTBL2NG
Dual common source
1200
25
79
SiC MOSFET
BL2
MSCSM120HM16CTBL3NG
Full bridge
1200
12.5
150
SiC MOSFET
BL3
MSCSM120DDUM16CTBL3NG
Dual common source
1200
12.5
150
SiC MOSFET
BL3
MSCGLQ50A120CTBL1NG
Phase leg
1200
2.05
110
TRENCH 4 FAST IGBT
BL1
MSCGLQ50DU120CTBL1NG
Dual common source
1200
2.05
110
TRENCH 4 FAST IGBT
BL1
MSCGLQ50H120CTBL2NG
Full bridge
1200
2.05
110
TRENCH 4 FAST IGBT
BL2
MSCGLQ50DH120CTBL2NG
Asymmetrical bridge
1200
2.05
110
TRENCH 4 FAST IGBT
BL2
MSCGLQ50DDU120CTBL2NG
Dual common source
1200
2.05
110
TRENCH 4 FAST IGBT
BL2
MSCGLQ75H120CTBL3NG
Full bridge
1200
2.05
160
TRENCH 4 FAST IGBT
BL3
MSCGLQ75DDU120CTBL3NG
Dual common source
1200
2.05
160
TRENCH 4 FAST IGBT
BL3
MSCDR90A160BL1NG
Phase leg
1600
1.3
90
Rectifier Diode
BL1

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.