Vincotech 10-EZ124PA032ME-LQ17F18T

1200 V H-Bridge SiC Power Module
Vincotech 10-EZ124PA032ME-LQ17F18T

Vincotech 10-EZ124PA032ME-LQ17F18T

  • Integrated with Wolfspeed’s 1200 V SiC MOSFET die
  • Baseplateless housing and advanced die attach technology for enhanced reliability
  • Kelvin Emitter configuration
  • Integrated NTC
  • Compact and light design
  • High efficiency and higher switching frequency enables smaller passive components
  • Extended lifetime also in harsh environments
  • Easy assembly with pre-applied phase change material and Press-fit pins
  • Improved switching performance

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.