RFPD
Why Faster Switching in High Power Electronics

Why Faster Switching in High Power Electronics

November 2, 2022

RECOM

Gate Drivers

The adoption of Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors continues to grow at a remarkable pace. This Tech Chat discusses the importance of faster switching with these devices and the advantages design engineers are after with their usage.

Playlist

1 Videos

Related Content
Energy Storage and Power Conversion

PCIM 2024

Explore products and solutions highlighted at our booth during PCIM 2024.

READ MORE »
June 6, 2024

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

Ask an Expert

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
Richardson RFPD Logo

Helpful Links