One of the goals of PECTA is to analyze and aggregate information on wide bandgap (WBG) based power electronic devices and to develop a better understanding, also among governments and policy–makers. A sub-target is to derive roadmaps for the integration of WBG devices into current applications. In order to provide an overview of all markets, a first Application Readiness Map (ARM) was developed in 2020, based on the ECPE WBG Roadmap, considering silicon carbide (SiC) and gallium nitride (GaN) devices.
This report presents an update of the ARM. It describes the current status of the WBG market and of the WBG technology, explains changes in the roadmap topics, and adds additional market segments that are now also relevant for WBG power semiconductors. The focus lies still on SiC and GaN devices. In order to better assess the predictive validity of the presented ARM, the most influential factors are presented and discussed.
Related Content
Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices
Wolfspeed is now expanding system design options by commercially releasing a well-
known top-side cooled package to both automotive and industrial markets.
SiC or GaN: Choosing the Best Wide Bandgap Technology for Your Application
Whether it’s SiC or GaN, wide bandgap materials are powering the future—driving breakthroughs in EVs, renewable energy, and next-gen electronics with unmatched efficiency and performance.
Optimizing Isolated Gate Drivers for Wide Bandgap Devices: Key Requirements and Advancements
This article explores key requirements for designing isolated gate drivers optimized for WBG devices, highlighting critical advancements that enhance performance, efficiency and reliability.
