Silicon carbide (SiC) offers many improvements over traditional silicon (Si) components, spanning a wide range of power levels and applications.
With higher operating temperatures, faster switching speeds, increased power density, and higher-voltage/-current capabilities, it can easily be used to replace pre-existing Si-based components and systems, especially when offered in industry-standard footprints such as the WolfPACK product line of power modules. Whether performing a system upgrade or designing a new configuration, SiC provides maximum efficiency and reliability with the lowest losses.
The Wolfspeed SiC product portfolio consists of devices that support all power ranges. Discrete components ranging from 650 V to 1,700 V provide flexibility and low-cost, multi-source solutions, while the WolfPACK family of press-fit, baseplate-less designs offers industry-standard, mid-range power options. And between these WolfPACK modules and the higher-power module solutions, the designer can scale power appropriate to their application and optimize power density, design simplicity, system costs, and reliability.
Related Content
Gen 4 Silicon Carbide Technology: Redefining Performance & Durability in High-Power Applications
This white paper highlights Wolfspeed’s fourth-generation silicon carbide (SiC) MOSFET technology, engineered for high-power electronics applications.
SiC Makes for Smarter Semi Fab/Process Power Supplies
Semiconductor device fabrication processes have several distinct and intricate steps. Power supplies used in semiconductor fab equipment are essential for every task at the front and back end of the process.
Dynamic Characterization and Measurement Methods for SiC MOSFETs
Learn how Wolfspeed’s SiC MOSFET clamped inductive load (CIL) test system can help you accurately model your design.
