MACOM’s CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers 35 Watts of power from 9 to 11 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms.
- Features
- 9.0 – 11.0 GHz Operation
- Typical Output Power 40 W
- Typical Power Gain 23 dB
- Typical PAE 35%
- Operation up to 28 V
- Applications
- Military Radar
- Marine Radar
- Weather Radar
- Medical Applications
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