PE42448: Low Loss, High Linearity for 5G Beamforming

Optimized for Hybrid Analog Architectures with UltraCMOS+ SOI Technology
UltraCMOS+™ SP4T RF Switch – PE42448 from pSemi

UltraCMOS+™ SP4T RF Switch – PE42448 from pSemi

Discover pSemi’s newest UltraCMOS+™ SP4T RF switch, offering low insertion loss, high isolation, exceptional linearity, and fast settling time for efficient RF signal routing.

PE42448  from pSemi

The PE42448 is a HaRP™ technology-enhanced SP4T RF switch that supports a frequency range from 10 MHz to 6 GHz. It delivers extremely low insertion loss and high linearity with high input power handling capability, making this device ideal for hybrid analog beamforming and in 5G massive MIMO (multi-input multi-output) applications. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42448 is manufactured on pSemi’s UltraCMOS+ process, a patented advanced form of silicon-on-insulator (SOI) technology.

Key Features

  • Low insertion loss:
    • 0.42 dB at 2.6 GHz typical
    • 0.6 dB at 3.8 GHz typical
  • High linearity IIP3: 88.5 dBm
  • High power handling: 39.5 dBm RMS, 11 dBm PAR
  • +115 °C operating temperature
  • Packaging: 20-lead 4 x 4 mm LGA

Functional Diagram

Applications

  • Analog hybrid beamforming RF front end
  • 5G massive MIMO active antenna system (AAS)
  • 4G/4.5G TD-LTE macro/micro cell/RRH

Specifications

Description
UltraCMOS+™ SP4T RF Switch
Min Freq.
10 MHz
Max Freq.
6 GHz
Max Typ. IL (dB)
3.0
Min Typ. IL (dB)
0.25
Max Typ. Iso (dB)
45.0
Min Typ. Iso (dB)
16.0
P1dB/P0.1dB (dBm)
50.5
IIP3 (dBm)
88.5 dBm
Max Power Rating (dBm)
39.5
Max Temp (ºC)
+115 °C
VDD Range (V)
4.5–5.5
Switching Time
3.0 µs
ESD HBM (V)
1500
Package (mm)
4×4
Package
20L LGA

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