GaN Breaks Barriers—RF Power Amplifiers Go Wide and High

The emergence of new semiconductor materials like GaN have opened the possibilities to reach higher power levels covering wide bandwidths. Shorter, gate length GaAs devices have extended frequency ranges from 20 GHz to 40 GHz and beyond. The reliability of these devices is shown in literature to exceed 1 million hours, making them ubiquitous for modern day electronic systems. We expect the trends of higher frequencies and wider bandwidth to continue into the future.

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