The MSC035SMA070B4 device is a 700 V, 35 mOhm SiC MOSFET in a TO-247 lead package with a source sense.

The ATSAMR30M18A is the world’s most compact 802.15.4 Sub-GHz module for the IoT.

27.5-31 GHz, 9 W GaN PA MMIC for 5G, Radar and SatCom from Microchip

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions.

The ATSAMR21G18-MR210UA is a 19 x 20mm wireless module with a solder mount footprint.

Microchip’s Jason Chiang reviews the reference design for a 30kW inverter aimed at EV charging applications that is based on silicon-carbide semiconductors.

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.

The high power and voltage requirements of electric vehicles (EVs) of all types, including electric buses and other etransportation power systems, require the higher efficiency of silicon carbide (SiC) technology.

Download this new 56-page brochure from Microchip highlighting their extensive offering of silicon and silicon carbide high-voltage power discretes and modules, as well as several associated digital gate drivers.

The MSCSM120AM042CD3AG is a phase leg 1200 V/495 A silicon carbide power module.