The “Walk Around the Block” webinar series addresses design challenges and trending topics relative to power electronics applications. In this series, we’ll focus on EV fast charging and highlight a variety of topics from our vendors.

Switching a SiC MOSFET Power Module creates two significant problems that need to be addressed in order to optimize the performance of the device: turn-off voltage overshoot and ringing.

Microchip’s AgileSwitch family of Digital Programmable Gate Drivers feature Augmented Switching technology to enable efficient and reliable control and protection of Silicon Carbide (SiC) MOSFET devices.

Silicon carbide (SiC) devices that facilitate high-voltage operations at low switching losses because of wide-bandgap (WBG) material start their accelerated evolution and adoption in automotive, industrial, aerospace, and defense applications.

Breakthrough Technology Combines High Performance With Low Losses.

Microsemi SiC Schottky diode modules offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs.

Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.

Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size.

Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency.