This webinar is a real account of what happens and how an amplifier is created using the nonlinear simulation capabilities of NI AWR Design Environment and the large signal model of the CGHV14800F.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies.

The Wolfspeed WolfPACK module family uses a fixed interval pin-grid for rapid development of alternate configurations, and devices are currently available in half-bridge and six-pack configurations.

This Wolfspeed paper presents a SiC MOSFET-based 6.6 kW bi-directional Electric Vehicle (EV) on-board charger (OBC), with high efficiency and high power density.

Leverage the performance benefits of Wolfspeed’s WolfPACK baseplateless SiC power modules to achieve smaller, more scalable power systems.

This paper addresses the current SiC landscape and advantages, designing with losses, switching frequency, the effects and considerations of inductances, gate driving, noise, and applications enabled by SiC.

The “Walk Around the Block” webinar series addresses design challenges and trending topics relative to power electronics applications. In this series, we’ll focus on EV fast charging and highlight a variety of topics from our vendors.

MACOM’s CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate.

Review our list of featured Wolfspeed products available for sampling.

Analog Devices reviews its test set-up and procedures to measure the common mode transient immunity of its isolated gate drivers and their comparison against competitive solutions.