Redefining Performance and Durability in High-Power Applications

Designed to comprehensively improve system efficiency
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Wolfspeed Gen 4 MOSFETs: Powering Real-World Performance with Next-Gen Efficiency

Wolfspeed Gen 4 MOSFETs: Powering Real-World Performance with Next-Gen Efficiency

Wolfspeed has unveiled its Gen 4 technology platform—engineered to deliver breakthrough performance, durability, and efficiency for high-power applications.

Designed to simplify switching behavior and reduce design complexity, Gen 4 supports a broad range of products including power modules, discrete components, and bare die, available in 750V, 1200V, and 2300V classes.

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Why Industrial 1200V GEN 4?  from Wolfspeed

Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed’s 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. 

Improved Switching Performance

Reduced losses, higher efficiency, higher switching frequencies, smaller passives

Robustness & Reliability

Built on Wolfspeed’s decades of proven SiC leadership, long-term field reliability

One portfolio-All Markets

Build on 200mm, wide voltage range 650V to 3300V+

Compatiblity

15-18VGS turn_on and 0V…-5V turn-off capability

Thermal Performance

Cooler operation, reduced cooling requirements, longer lifetime

Higher Power Density

Lighter, more compact systems

Industrial 1200V GEN 4  Alternatives for GEN 3 Devices

The 1200 V MOSFETs are designed for ultra-low RDS(ON) and increased CGS/CGD ratio for improved hard-switching performance with lower turn-on losses possible within the safe operating area. Soft-switching applications can also benefit from the more linear COSS behavior. The efficiency gained by moving from a silicon-based solution to silicon carbide can help reduce system size, weight, design complexity, and cost in most high-power applications.
J TO-263-7
J TO-263-7
J TO-263-7
Part Number
RDS(on)(25 C)
D
TO-247- 3
K
TO-247-4
K1
TO-247-4 (LP)
J
TO-263-7
J1
TO-263-7XL
J2
TO-263-7XL
U2
TSC
C3M0016120x
16mΩ
N/A
C4MS018120K*
C4MS018120K1*
C4MS018120J2*
C4MS018120U2*
C3M0021120x
21mΩ
N/A
C4MS025120K
C4MS025120K1
C4MS025120J2
C4MS025120U2
C3M0032120x
32mΩ
N/A
C4MS036120K
C4MS036120K1
C4MS036120J2
C4MS036120U2
C3M0040120x
40mΩ
N/A
C4MS047120K
C4MS047120K1
C4MS047120J2
C4MS047120U2
C3M0075120x
75mΩ
N/A
C4MS065120K
C4MS065120K1
C4MS065120J2
C4MS065120U2
C4MS080120K*
C4MS080120K1*
C4MS080120J2*
C4MS080120U2*

*These devices will be released by 1H CY26
Note: These recommendations may vary based on the specific application topologies and mission profiles.

GeN 4 Technology Additional Resources

Gen 4 Silicon Carbide Technology:

Performance & Durability in High-Power Applications

This white paper highlights Wolfspeed’s fourth-generation silicon carbide (SiC) MOSFET technology, engineered for high-power electronics applications. Building on a legacy of SiC innovation, Wolfspeed has regularly unveiled cutting-edge technology solutions redefining industry benchmarks. Before the Gen 4 release, the third-generation SiC MOSFETs balanced important design elements for a broad spectrum of use cases, setting a benchmark for well-rounded performance in hard-switching applications.
Download White Paper

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
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