Search

Microchip - MSC035SMA170S

Offers Superior Avalanche Ruggedness
RFPD
In Stock: Microchip 1700V, 35mΩ SiC MOSFET in D3PAK

In Stock: Microchip 1700V, 35mΩ SiC MOSFET in D3PAK

  • Mfg Part Number: MSC035SMA170S
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC035SMA170S device is a 1700 V, 35 mΩ SiC MOSFET in a TO-268 (D3PAK) package.
Order / Learn More
  • Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175 C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant
  • Benefits
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership
  • Applications
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
Microchip Logo

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

Ask an Expert

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.