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Microchip - MSC017SMA120B4

Silicon Carbide N-Channel Power MOSFET
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SiC in Stock: 1200 V, 17 mΩ SiC MOSFET in TO-247, 4-Lead Package

SiC in Stock: 1200 V, 17 mΩ SiC MOSFET in TO-247, 4-Lead Package

  • Mfg Part Number: MSC017SMA120B4
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC017SMA120B4 device is a 1200 V, 17 mΩ SiC MOSFET in a TO-247 package with a source sense.
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  • Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175 °C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant
  • Benefits
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership
  • Applications
  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution
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