- Mfg Part Number: MSC080SMA120B4
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
- Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = +175C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS Compliant
- Benefits
- High efficiency to enable lighter/compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need of external freewheeling diode
- Lower system cost of ownership
- Applications
- PV inverter, converter and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Related Content
Energy Storage and Power Conversion
Unleash the Full Capability of Silicon Carbide – Quickly Optimize with Digital Control
With Microchip’s SiC digital gate drivers, users experience reduced switching losses and improved system density.
July 19, 2023
Energy Storage and Power Conversion
SiC Gate Driver Cores and Module Adapter Boards
Microchip offers a full line of Module Adapter Boards (MABs) and gate driver cores that result in fully functional, plug-and-play gate driver boards.
July 19, 2023
Energy Storage and Power Conversion
Silicon Carbide (SiC) Gate Driver Development Kits
Microchip accelerated Silicon Carbide (SiC) development kits include the hardware and software elements required to optimize the performance of SiC modules and systems.
July 19, 2023
