Microchip - MSC035SMA070B4

700 V, 35 mΩ SiC MOSFET in TO-247-4 Package
SiC in Stock: Microchip Full-bridge 1200V/173A SiC Power Module

SiC in Stock: Microchip Full-bridge 1200V/173A SiC Power Module

This MSCSM120HM16CT3AG device is a full bridge 1200 V/173 A full Silicon Carbide (SiC) power module.

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance
  • High power and efficiency converters and inverters
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant
  • Uninterruptible power supplies
  • Switched mode power supplies
  • EV motor and traction drive
  • Welding converters

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.