With Great Power Comes Great Responsibility

November 8, 2022

Gate Drivers

Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors offer tremendous advantages to design engineers but their faster switching capabilities does present some challenges. This Tech Chat offers further guidance on addressing those challenges to ensure the benefits of GaN and SiC are fully achieved.

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With Great Power Comes Great Responsibility (new)

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.

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