With Great Power Comes Great Responsibility

With Great Power Comes Great Responsibility

November 8, 2022

Gate Drivers

Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductors offer tremendous advantages to design engineers but their faster switching capabilities does present some challenges. This Tech Chat offers further guidance on addressing those challenges to ensure the benefits of GaN and SiC are fully achieved.

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Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.