Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs. The desired reliability is often not possible without sacrificing efficiency, nor can silicon-based solutions meet today’s challenging size, weight and cost requirements. With the arrival of high-voltage silicon carbide (SiC) MOSFETs, however, designers now have an opportunity to improve performance while solving all the other challenges.
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