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Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs

Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs

September 11, 2022

RECOM

When evaluating new switching transistors circuits, often only the transistor specifications are considered. However, a very significant contributor in the robustness of the final design is the driver circuit. This whitepaper shares some design guidelines and advice on how to reduce failure causes and simplify the design – with application examples for a better comprehension.

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.
 
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