Silicon Carbide

Microchip offers a full line of Module Adapter Boards (MABs) and gate driver cores that result in fully functional, plug-and-play gate driver boards. Microchip’s offering includes adapter boards for a wide range of Silicon Carbide (SiC) power modules.

This SiC ISOTOP® N-Channel power MOSFET features superior avalanche ruggedness, low capacitances and gate charge and stable operation up to 175⁰ C.

• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = +175C

These 6th-gen 650 V SiC Schottky diodes enable industry-leading efficiency and power density for the most demanding power conversion applications.

• Low VF = 1.27 V (25°C) & 1.37 (175°C)
• Best-in-class DVF/DT
• Zero reverse recovery
• High breakdown voltage

This 1200 V / 27 mΩ flow 2xBOOST E2 SiC module features high switching frequency and a low inductive package.

• Voltage: 1200 V
• Current: 56 A
• Dual boost configuration
• flow E2 12mm package

These high-performance, durable 1700 V SiC MOSFETs help maximize system efficiency and minimize system weight and size.

• Low capacitances and low gate charge
• Fast switching speed
• Stable operation, TJ(max) = +175 °C
• Fast and reliable body diode

This family of SiC-based power modules for aerospace applications enable more efficient and compact power conversion and engine drive systems.

• 1200V SiC MOSFETs & 1600V diodes
• For harsh aviation applications
• Low profile, low inductance
• Reduce development time

WolfPACK™ SiC power, compact, baseplate-less modules deliver the industry’s highest power density in its class for unsurpassed efficiency.

• Maximum power density
• Ease of layout and assembly
• System scalability and reliability
• Simpler cooling systems