Silicon carbide (SiC) offers significant advantages in high-power, high voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.
We stock and support the following Silicon Carbide
This SiC ISOTOP® N-Channel power MOSFET features superior avalanche ruggedness, low capacitances and gate charge and stable operation up to 175⁰ C.
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = +175C