Customer Support
Available at 1-800-737-6937
Search
Shop RichardsonRFPD
Visit My Account
View Cart
Help

Microchip - MSC025SMA120J

High Efficiency to Enable Lighter, more Compact System.
RFPD
In Stock: 1200V, 25 mOhm SOT-227 Silicon Carbide MOSFET

In Stock: 1200V, 25 mOhm SOT-227 Silicon Carbide MOSFET

  • Mfg Part Number: MSC025SMA120J
This SiC ISOTOP® N-Channel power MOSFET features superior avalanche ruggedness, low capacitances and gate charge and stable operation up to 175⁰ C.
Order / Learn More
Microchip Logo
  • Features
  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = +175C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS Compliant
  • Isolated voltage to 2500V
  • Benefits
  • High efficiency to enable lighter/compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need of external freewheeling diode
  • Lower system cost of ownership
  • Applications
  • PV inverter, converter and industrial motor drives
  • Smart grid transmission & distribution
  • Induction heating, and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

Ask an Expert

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.