Richardson RFPD Introduces New GaN-on-SiC Transistor for RF Energy from NXP

Richardson RFPD Introduces New GaN-on-SiC Transistor for RF Energy from NXP

300 W CW GaN transistor designed for ISM applications at 2450 MHz


1950 S. Batavia Avenue, Suite 100
Geneva, IL 60134

P: 630 262 6800

F: 630 262 6850

February 11, 2020 – Geneva, III.:

Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for a new RF power GaN transistor from NXP Semiconductors.

The MRF24G300HS is a 300 W CW GaN transistor designed for industrial, scientific and medical (ISM) applications at 2450 MHz. It offers 73 percent drain efficiency at 2450 MHz, and the high-power density of GaN enables the device to reach high-output power in a small footprint.

The device is suitable for use in CW, pulse, cycling and linear applications, including industrial heating, welding and heat sealing, plasma generation, lighting, scientific instrumentation, microwave ablation and diathermy. This high-gain, high-efficiency device is easy to use and provides long life in even the most demanding environments. Additional key features include:

  • Device can be used in a single-ended or push-pull configuration
  • Input-matched for simplified input circuitry
  • Qualified up to 55 V
  • Available in NI-780S-4L package


A test fixture is also available.

To find more information, or to purchase these products today online, visit the MRF24G300HS and MRF24G300HS-2450 webpages. The products are also available by calling 1-800-737-6937 (within North America); or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from NXP, visit the NXP storefront webpage.


Director of Strategic Marketing
P: 630 262 6800

NXP Logo