Discover pSemi’s high-performance RF switches, designed to excel in a wide range of RF applications. Additionally, pSemi has introduced the world’s smallest fully integrated IoT front-end module, tailored to drive innovation in next-generation IoT solutions.
SPDT & SP4T RF Switches
Discover pSemi’s newest RF switches, offering low insertion loss, high isolation, exceptional linearity, and fast settling time for efficient RF signal routing.
Smallest, Fully Integrated RF-SOI FEM
pSemi pioneers RF SOI technology for seamless FEM integration. Their PE562212, the world’s smallest PA-LNA-SW IoT FEM, enhances IoT connectivity and performance.
SPDT & SP4T RF Switches from pSemi
PE42528
UltraCMOS+™ SPDT RF Switch, 9 kHz–30 GHz
The PE42528 is a HaRP™ technology-enhanced reflective SPDT RF switch that supports a wide frequency range from 9 kHz to 30 GHz. It delivers low insertion loss, fast switching time, and high isolation performance, making this device ideal for test and measurement (T&M), 5G mmWave, microwave backhaul, radar, and satellite communications applications. No blocking capacitors are required if DC voltage is not present on the RF ports.
- Ultra wide frequency: 9 kHz–30 GHz
- Low insertion loss:
- 1.3 dB @ 10 GHz
- 1.6 dB @ 30 GHz
- IP3: 48 dBm
- Power handling: 34 dBm peak
- High return loss: >17 dB across the band
- Fast switching time: 8 ns
- Package: 20-lead 3×3 mm LGA
PE424201
UltraCMOS© SPDT RF Switch, 9 kHz–12 GHz
The PE424201 is a HaRP™ technology-enhanced reflective SPDT RF switch that supports the 9 kHz–12 GHz frequency range. It delivers high linearity, high power handling, and low insertion loss ideal for use in a wide range of high-performance RF applications.
- Operating frequency: 9 KHz – 12 GHz
- Reflective 50Ω design
- High linearity: 86 dBm IIP3
- Low insertion loss: 0.4 dB @ 8.0 GHz
- High power handling: 50 dBm peak
- Return loss: 15 dB minimum
- Fast switching time: 1.5 μs
- Operating temperature range: -40 to +105 °C
- Packaging: 12-lead 2.0 × 2.0 mm LGA
PE424202
UltraCMOS© SPDT RF Switch, 9 kHz–12 GHz
The PE424202 is a HaRP™ technology-enhanced reflective SPDT RF switch that supports the 9 kHz–12 GHz frequency range. It delivers high linearity, high power handling, and low insertion loss ideal for use in a wide range of high-performance RF applications.
- Reflective 50Ω design
- High linearity: 86 dBm IIP3
- Low insertion loss: 0.4 dB @ 8.0 GHz
- High power handling at low frequency:
- 31 dBm @ 100 kHz
- Return loss: 15 dB minimum
- Fast switching time: 8.0 μs
- Operating temperature range: -40 to +105 °C
- Packaging: 12-lead 2.0 × 2.0 mm LGA
PE42429
Low Insertion Loss UltraCMOS© SPDT RF Switch, 10 MHz–8.5 GHz
The PE42429 is a HaRP™ technology-enhanced SPDT RF switch designed for use in 4G/5G wireless infrastructure and other high-performance RF applications. It consists of two symmetric RF ports with very high isolation up to 8.5 GHz.
- Operating frequency: 10 MHz to 8.5 GHz
- High isolation: 40 dB @ 8.5 GHz
- Low insertion loss: 1 dB @ 8.5 GHz
- High linearity: 68 dBm IIP3
- Fast switching time: 600 ns
- Operating temperature range: -40 to +105 °C
- Packaging: 12-lead 2.0 × 2.0 mm QFN
PE42529
Low Insertion Loss UltraCMOS© SPDT RF Switch, 9 kHz–8.5 GHz
The PE42529 is a HaRP™ technology-enhanced SPDT RF switch designed for use in test/ATE and other high performance RF applications. It consists of two symmetric RF ports with very high isolation up to 8.5 GHz.
- High power handling at low frequency:
- 10 dBm @ 9 kHz
- 15 dBm @ 100 MHz
- High isolation: 40 dB @ 8.5 GHz
- Low insertion loss: 1 dB @ 8.5 GHz
- High linearity: 68 dBm IIP3
- Fast switching time: 1.9 μs
- Operating temperature range: -40 to +105 °C
- Packaging: 12-lead 2.0 × 2.0 mm QFN
PE42544
High-isolation UltraCMOS© SP4T RF Switch, 10 MHz–8.5 GHz
The PE42544 is a HaRP™ technology-enhanced SP4T RF switch designed for use in test/ATE and other high performance RF applications. It consists of four symmetric RF ports with very high isolation up to 8.5 GHz.
- Operating frequency: 10 MHz to 8.5 GHz
- High isolation: 40 dB @ 6 GHz
- Low insertion loss: 1.3 dB @ 8.5 GHz
- High linearity: 61 dBm IIP3
- Fast switching time: 350 ns
- Operating temperature range: -40 to +105 °C
- Packaging: 20-lead 3.0 × 3.0 mm QFN
PE42448
UltraCMOS+™ SP4T RF Switch, 2.3 GHz–5 GHz
The PE42448 features low insertion loss, measured at 0.5 dB at 2.6 GHz and 0.6 dB at 3.8 GHz, along with high linearity, achieving an IIP3 value of 88.5 dBm. It is capable of handling high power, with an RMS power of 39.5 dBm and a peak-to-average ratio (PAR) of 11 dB. The device operates at temperatures up to +115 °C and is housed in a 20-lead 4 × 4 mm LGA package.
- Low insertion loss:
- 0.5 dB @ 2.6 GHz
- 0.6 dB @ 3.8 GHz
- High linearity IIP3: 88.5 dBm
- High power handling: 40 dBm CW, 52 dBm peak
- Operating temperature: +115 °C
- Packaging: 20-lead 4 × 4 mm LGA
PE42549
Low Insertion Loss UltraCMOS© SP4T RF Switch, 9 kHz–8.5 GHz
The PE42549 is a HaRP™ technology-enhanced SP4T RF switch designed for use in test/ATE and other high performance RF applications. It consists of four symmetric RF ports with very high isolation up to 8.5 GHz.
- High power handling at low frequency:
- 5 dBm @ 9 kHz
- 15 dBm @ 100 MHz
- High isolation: 39 dB @ 6 GHz
- Low insertion loss: 1.6 dB @ 8.5 GHz
- High linearity: 61 dBm IIP3
- Fast switching time: 1.9 μs
- Operating temperature range: -40 to +105 °C
- Packaging: 20-lead 3.0 × 3.0 mm QFN
