Automotive-Qualified 1200V, 450A SiC Conduction-Optimized, Half Bridge Module

Wolfspeed’s Silicon Carbide (SiC) 650V Schottky Diode technology is optimized for high-performance power electronics applications.

Wolfspeed’s family of WolfPACK™ modules from Richardson RFPD deliver a power portfolio that encompasses a wide spectrum of applications for today’s designers.

Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications, while maintaining the baseplate compatibility of a 62 mm module.

Silicon Carbide (SiC) technology has improved several systems and subsystem components across a variety of applications.

New video series from Wolfspeed Silicon Carbide, GaN, and silicon all have their place, but how do you know which is the best fit for your power system?

Wolfspeed and Richardson RFPD have developed a series of Tech Chats which comprise conversations between engineers on various SiC topics.

6th Generation 650 V, 10 A Silicon Carbide Schottky Diode

This paper presents the CRD-600DA12E-XM3 three-phase dual inverter reference design and reveals how its components.

Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.