Military modernization continues relentlessly. An increase in military spending is driving procurement of advanced wireless communications systems across land, air, and maritime platforms.

The use of silicon carbide (SiC) MOSFETs has enabled high-efficiency power delivery for a variety of applications, such as electric-vehicle fast charging, power supplies, renewable energy, and grid infrastructure.

They are an integral part of 5G test systems and play a key role in ensuring test reliability and measurement accuracy.

When it is not practical to use a power module in your design, paralleling MOSFETs is a common approach.

This Tech Chat helps design engineers better understand how the Rds(on) of Wolfspeed’s SiC MOSFETs compare to other available technologies, such as GaN, Silicon or other SiC devices.

What comes to mind when you think of a ‘Portable Power Station’? A bulky and heavy machine that is loud, yet underpowered. A machine that frustrates customers.

The objective of this application note is to provide users of Wolfspeed wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. I

Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat.

The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs.

The electric vehicle (EV) industry has struggled to reduce EV charging times while keeping hardware economical and compact.