The electric vehicle (EV) industry has struggled to reduce EV charging times while keeping hardware economical and compact. With silicon carbide (SiC) MOSFETs, it has been proven that a higher efficiency and power density coupled with improved ruggedness and reliability help to keep system designs low-profile, lighter and lower-cost in terms of maintenance and component longevity.
The same applies to EV charging systems, and Wolfspeed’s 1,200V SiC MOSFETs not only meet up to these performance enhancements but also allow for bidirectional charging/discharging, thereby replacing IBGT topologies and allowing for simple two-level implementations.
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