Optimizing GaN MOSFET Performance

Optimizing GaN MOSFET Performance

January 13, 2025

Gallium Nitride

In this Tech Chat, representatives of Richardson RFPD and Exeling s.r.l, review a GaN half bridge evaluation board co-developed between the companies. Utilizing key components from Innoscience (700V, 190mOhm GaN FET), Skyworks (isolated gate driver) and RECOM (DC-DC converter), the discussion centers on understanding gate drive loop parasitics and techniques to mitigate them. The role of negative bias and the benefits of Kelvin source connections are two key mitigation techniques reviewed.

Participants:

Michele Sclocchi Field
Applications Engineer, Energy & Power
Richardson RFPD

 

Luca De Guglielmo
Hardware Engineer, Co-Founder & CTO
Exelikng s.r.l.

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