Evaluation boards are essential for component performance assessment. Our design experts and Exeling have collaborated to create a GaN half-bridge evaluation board.

Innoscience’s family of 700V integrated devices available from Richardson RFPD combine power GaN HEMT, driver, current sense and other functions within a single, industry-standard QFN 6x8mm package.

Innoscience’s 650 V GaN-on-silicon enhancement-mode power transistors are designed for high-voltage power applications.

The ISG3201  has a 34 A continuous current capability, zero reverse recovery charge, and ultra-low on resistance.

The INN100W032A is a 100 V enhancement-mode GaN power transistor for Class D audio, high-frequency DC-DC converters, motor drives and more.

The INN650D080BS is a 650 V GaN-on-Silicon enhancement-mode power transistor in 8 mm × 8 mm dual flat no-lead (DFN) package.