The MSC025SMA120B device is a 1200 V, 25 mΩ SiC MOSFET in a TO-247 package.

Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs.

Microchip offers high-performance, GaN on SiC, High Electron Mobility Transistor (HEMT)-based discrete CW and pulsed RF and microwave transistor products.

This article focuses on the three EV charging levels and the Microchip solutions that can support several aspects of residential, commercial and fast charging systems.

This article highlights Microchip’s SiC devices available from Richardson RFPD that enable DC circuit protection.

Enable your 5G, Aerospace & Defense, Test & Measurement or Industrial RF applications with Microchip’s RF Power solutions.

The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions.

Adopt SiC with Ease, Speed and Confidence with Microchip Silicon Carbide.

This technical article reviews Microchip’s solutions for all types of e-mobility motor control applications, including traction motors, fans, pumps, compressors and more.

The MSCSM120TAM11CTPAG device is a 3 phase leg 1200 V/251 A full Silicon Carbide (SiC) power module.